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固体表面、界面和薄膜(第5版,影印版) 世界图书出版公司书籍详细信息
- ISBN：9787510077869
- 作者：暂无作者
- 出版社：暂无出版社
- 出版时间：2014-07
- 页数：暂无页数
- 价格：79.20
- 纸张：轻型纸
- 装帧：平装-胶订
- 开本：16开
- 语言：未知
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内容简介：
这本讲述固体表面、界面和薄膜的教材已经更新到了第5版，被世界上的众多大学作为教材，可见其经典程度。书中既包含了该科目的理论部分，又包括了实验部分，使其在讲述表面和界面书籍里面具有很强的独特性。书中也提供了基本概念和应用，是学习固态物理的一本推荐图书。强烈推荐固态物理领域和纳米技术领域的高年级学生和科研人员。
书籍目录：
1Surface and Interface Physics： Its Definition and Importance
Panel Ⅰ： Ultrahigh Vacuum （UHV） Technology
Panel Ⅱ：Basics of Particle Optics and Spectroscopy
Problems
2Preparation of Well—Defined Surfaces，lnterfaces and Thin Films
2.1 Why Is Ultrahigh Vacuum Used？
2.2Cleavage in UHV
2.3 Ion Bombardment and Annealing
2.4Evaporation and Molecular Beam Epitaxy （MBE）
2.5Epitaxy by Means of Chemical Reactions
Panel Ⅲ： Auger Electron Spectroscopy （AES）
Panel Ⅳ：Secondary Ion Mass Spectroscopy （SIMS）
Problems
3Morphology and Structure of Surfaces，lnterfaces and Thin Films
3.1 Surface Stress， Surface Energy， and Macroscopic Shape
3.2Relaxation， Reconstruction， and Defects
3.3Two—Dimensional Lattices， Superstructure， and Reciprocal Space
3.3.1Surface Lattices and Superstructures
3.3.22D Reciprocal Lattice
3.4Structural Models of Solid—Solid Interfaces
3.5 Nucleation and Growth of Thin Films
3.5.1Modes of Film Growth
3.5.2“Capillary Model" of Nucleation
3.6 Film—Growth Studies： Experimental Methods and Some Results
Panel Ⅴ： Scanning Electron Microscopy （SEM） and Microprobe Techniques
Panel Ⅵ：Scanning Tunneling Microscopy （STM）
Panel Ⅶ：Surface Extended X—Ray Absorption Fine Structure（SEXAFS）
Problems
4 Scattering from Surfaces and Thin Films
4.1 Kinematic Theory of Surface Scattering
4.2 The Kinematic Theory of Low—Energy Electron Diffraction
4.3 What Can We Learn from Inspection of a LEED Pattem？
4.4 Dynamic LEED Theory， and Structure Analysis
4.4.1Matching Formalism
4.4.2Multiple—Scattering Formalism
4.4.3 Structure Analysis
4.5 Kinematics of an Inelastic Surface Scattering Experiment
4.6 Dielectric Theory of Inelastic Electron Scattering
4.6.1 Bulk Scattering
4.6.2 Surface Scattering
4.7Dielectric Scattering on a Thin Surface Layer
4.8Some Experimental Examples of Inelastic Scatteringof Low—Energy Electrons at Surfaces
4.9The Classical Limit of Particle Scattering
4.10Conservation Laws for Atomic Collisions： ChemicalSurface Analysis
4.11 Rutherford BackScattering （RBS）： Channeling and Blocking
Panel Ⅷ：Low—Energy Electron Diffraction （LEED） and ReflectionHigh—Energy Electron Diffraction （RHEED）
Panel Ⅸ：Electron Energy Loss Spectroscopy （EELS）
Problems
5 Surface Phonons
5.1The Existence of "Surface" Lattice Vibrations on a Linear Chain
5.2 Extension to a Three—Dimensional Solid with a Surface
5.3 Rayleigh Waves
5.4 The Use of Rayleigh Waves as High—Frequency Filters
5.5Surface—Phonon （Plasmon） Polaritons
5.6Dispersion Curves from Experiment and from Realistic Calculations
Panel Ⅹ： Atom and Molecular Beam Scattering
Problems
6 Electronic Surface States
6.1 Surface States for a Semi—Infinite Chain in the Nearly—Free Electron Model
6.2 Surface States of a 3D Crystal and Their Charging Character
6.2.1 Intrinsic Surface States
6.2.2 Extrinsic Surface States
6.3Aspects of Photoemission Theory
6.3.1 General Deion
6.3.2 Angle—Integrated Photoemission
6.3.3Bulk— and Surface—State Emission
6.3.4 Symmetry of Initial States and Selection Rules
6.3.5Many—Body Aspects
6.4 Some Surface—State Band Structures for Metals
6.4.1s— and p—like Surface States
6.4.2 d—like Surface States
6.4.3Empty and Image—Potential Surface States
6.5Surface States on Semiconductors
6.5.1Elemental Semiconductors
6.5.2Ⅲ—Ⅴ Compound Semiconductors
6.5.3 Group Ⅲ Nitrides
6.5.4Ⅱ—Ⅵ Compound Semiconductors
Panel Ⅺ： Photoemission and Inverse Photoemission
Problems
7 Space—Charge Layers at Semiconductor Interfaces
7.1 Origin and Classification of Space—Charge Layers
7.2The Schottky Depletion Space—Charge Layer
7.3Weak Space—Charge Layers
7.4 Space—Charge Layers on Highly Degenerate Semiconductors
7.5 The Genera J Case ofa Space—Charge Layerand Fermi—Ievel Pinning
7.6Quantized Accumulation and Inversion Layers
7.7 Some Particular Interfaces and Their Surface Potentials
7.8The Silicon MOS Field—Effect Transistor
7.9Magnetic Field Induced Quantizatio
7.10Two—Dimensional Plasmons
Panel Ⅻ： Optical Surface Techniques
Problems
8Metal—Semconductor Junctions and SemiconductorHeterostructures
8.1 General Principles Governing the Electronic Structureof Solid—Solid Interfaces
8.2 Metal—Induced Gap States （MIGS） at the Metal—Semiconductor Interface
8.3Virtual Induced Gap States （VIGS） at the Semiconductor Heterointerface
8.4 Structure— and Chemistry—Dependent Models oflnterface States
8.5 Some Applications of Metal—Semiconductor Junctionsand Semiconductor Heterostructures
8.5.1Schottky Barriers
8.5.2 Semiconductor Heterojunctions and Modulation Doping
8.5.3The High Electron Mobility Transistor （HEMT）
8.6Quantum Effects in 2D Electron Gases
at Semiconductor Interfaces
Panel ⅩⅢ： Electrical Measurements of Schottky—Barrier Heightsand Band Offsets
Problems
9Collective Phenomena at Interfaces： Superconductivity and Ferromagnetism
9.1 Superconductivity at Interfaces
9.1.1Some General Remarks
9.1.2Fundamentals of Superconductivity
9.1.3 Andreev Reflection
9.1.4 A Simple Model for Transport Through a NormalConductor—Superconductor Interface
9.2Josephson Junctions with Ballistic Transport
9.2.1 Josephson Effects
9.2.2 Josephson Currents and Andreev Levels
9.2.3Subharmonic Gap Structures
9.3An Experimental Example of a Superconductor—Semiconductor2DEG—Superconductor Josephson Junction
9.3.1Preparation of the Nb—2DEG—Nb Junction
9.3.2 Critical Currents Through the Nb—2DEG—Nb Junction
9.3.3The Current Carrying Regime
9.3.4Supercurrent Control by Non—equilibrium Carriers
9.4Ferromagnetism at Surfaces and within Thin Films
9.4.1The Band Model of Ferromagnetism
9.4.2Ferromagnetism in Reduced Dimensions
9.5Magnetic Quantum Well States
9.6Magnetic Interlayer Coupling
9.7Giant Magnetoresistance and Spin—Transfer Torque Mechanism
9.7.1 Giant Magnetoresistance （GMR）
9.7.2Magnetic Anisotropies and Magnetic Domains
9.7.3 Spin—Transfer Torque Effect： A MagneticSwitching Device
Panel ⅩⅣ：Magneto—optical Characterization： Kerr Effect
Panel ⅩⅤ： Spin—Polarized Scanning Tunneling Microscopy （SP—STM）
Problems
10 Adsorption on Solid Surfaces
10.1Physisorption
10.2Chemisorption
10.3Work—Function Changes Induced by Adsorbates
10.4 Two—Dimensional Phase Transitions in Adsorbate Layers
Contents
10.5Adsorption Kinetics
Panel ⅩⅥ：Desorption Techniques
Panel ⅩⅦ： Kelvin—Probe and Photoemission Measurements for the Study of Work—Function Changesand Semiconductor Interfaces
Problems
References
Index
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