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半导体物理电子学书籍详细信息
- ISBN：9787030209405
- 作者：暂无作者
- 出版社：暂无出版社
- 出版时间：2008-2
- 页数：697
- 价格：98.00元
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内容简介：
《半导体物理电子学(第2版)》全面介绍了半导体物理的基本内容，这些内容是理解半导体的物理性质和光电器件制备原理的基础。《半导体物理电子学(第2版)》系统性强，合理地安排了物理原理，表征法以及半导体材料和器件的应用等内容，兼顾了物理学家、材料学家和设备工程师的需求。《半导体物理电子学(第2版)》反映了半导体技术在过去十年的进步，包括许多新出现并已进入市场的半导体器件。
书籍目录：
Preface1.Classification of Solids and Crystal Structure 1.1 Introduction 1.2 The Bravais Lattice 1.3 The Crystal Structure 1.4 Miller Indices and Crystal Planes 1.5 The Reciprocal Lattice and Brillouin Zone 1.6 Types of Crystal Bindings 1.7 Defects in a Crystalline Solid Problems Bibliography2.Lattice Dynamics 2.1 Introduction 2.2 The One-Dimensional Linear Chain 2.3 Dispersion Relation for a Three-Dimensional Lattice 2.4 The Concept of Phonons 2.5 The Density of States and Lattice Spectrum 2.6 Lattice Specific Heat Problems References Bibliography3.Semiconductor Statistics 3.1 Introduction 3.2 Maxwell-Boltzmann Statistics 3.3 Fermi-Dirac Statistics 3.4 Bose-Einstein Statistics 3.5 Statistics for the Shallow-Impurity States in a Semiconductor Problems Bibliography4.Energy Band Theory 4.1 Introduction 4.2 Basic Quantum Concepts and Wave Mechanics 4.3 The Bloch-Floquet Theorem 4.4 The Kronig-Penney Model 4.5 The Nearly Free Electron Approximation 4.6 The Tight-Binding Approximation 4.7 Energy Band Structures for Some Semiconductors 4.8 The Effective Mass Concept for Electrons and Holes 4.9 Energy Band Structures and Density of States for Low-Dimensional Systems Problems References Bibliography5.Equilibrium Properties of Semiconductors 5.1 Introduction 5.2 Densities of Electrons and Holes in a Semiconductor 5.3 Intrinsic Semiconductors 5.4 Extrinsic Semiconductors 5.5 Ionization Energies of Shallow-and Deep-Level Impurities 5.6 Hall Effect,Electrical Conductivity,and Hall Mobility 5.7 Heavy Doping Effects in a Degenerate Semiconductor Problems References Bibliography6.Excess Carrier Phenomenon in Semiconductors 6.1 Introduction 6.2 Nonradiative Recombination: The Shockley-Read-Hall Model 6.3 Band-to-Band Radiative Recombination 6.4 Band-to-Band Auger Recombination 6.5 Basic Semiconductor Equations 6.6 The Charge-Neutrality Equation 6.7 The Haynes-Shockley Experiment 6.8 The Photoconductivity Decay Experiment 6.9 Surface States and Surface Recombination Velocity 6.10 Deep-Level Transient Spectroscopy Technique 6.11 Surface Photovoltage Technique Problems References Bibliography7. Transport Properties of Semiconductors 7.1 Introduction 7.2 Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects 7.3 Boltzmann Transport Equation 7.4 Derivation of Transport Coefficients for n-type Semiconductors 7.5 Transport Coefficients for the Mixed Conduction Case 7.6 Transport Coefficients for Some Semiconductors Problems References Bibliography8. Scattering Mechanisms and Carrier Mobilities in Semiconductors. 8.1 Introduction 8.2 Differential Scattering Cross-Section 8.3 Ionized Impurity Scattering 8.4 Neutral Impurity Scattering 8.5 Acoustical Phonon Scattering 8.6 Optical Phonon Scattering 8.7 Scattering by Dislocations 8.8 Electron and Hole Mobilities in Semiconductors 8.9 Hot-Electron Effects in a Semiconductor Problems References Bibliography9. Optical Properties and Photoelectric Effects 9.1 Introduction 9.2 Optical Constants of a Solid 9.3 Free-Carrier Absorption Process 9.4 Fundamental Absorption Process 9.5 The Photoconductivity Effect 9.6 The Photovoltaic (Dember) Effect 9.7 The Photomagnetoelectric Effect Problems References Bibliography10. Metal-Semiconductor Contacts 10.1 Introduction 10.2 Metal Work Function and Schottky Effect 10.3 Thermionic Emission Theory 10.4 Ideal Schottky Contact 10.5 Current Flow in a Schottky Diode 10.6 Current-Voltage Characteristics of a Silicon and a GaAs Schottky Diode 10.7 Determination of Schottky Barrier Height 10.8 Enhancement of Effective Barrier Height 10.9 Applications of Schottky Diodes 10.10 Ohmic Contacts in Semiconductors Problems References Bibliography11. p-n Junction Diodes 11.1 Introduction 11.2 Equilibrium Properties of a p-n Junction Diode 11.3 p-n Junction Diode Under Bias Conditions 11.4 Minority Carrier Distribution and Current Flow 11.5 Diffusion Capacitance and Conductance 11.6 Minority Carrier Storage and Transient Behavior 11.7 Zener and Avalanche Breakdowns..; 11.8 Tunnel Diodes 11.9 p-n Heterojunction Diodes 11.10 Junction Field-Effect Transistors Problems References Bibliography12. Solar Cells and Photodetectors 12.1 Introduction 12.2 Photovoltaic Devices (Solar Cells) 12.3 Photodetectors Problems References Bibliography13. Light-Emitting Devices 13.1 Introduction 13.2 Device Physics, Structures, and Characteristics of LEDs 13.3 LED Materials and Technologies 13.4 Principles of Semiconductor LDs 13.5 Laser Diode (LD) Materials and Technologies Problems References Bibliography 14. Bipolar Junction Transistors 14.1 Introduction 14.2 Basic Device Structures and Modes of Operation 14.3 Current-Voltage Characteristics 14.4 Current Gain, Base Transport Factor, and Emitter Injection Efficiency 14.5 Modeling of a Bipolar Junction Transistor 14.6 Switching and Frequency Response 14.7 Advanced Bipolar Junction Transistors 14.8 Thyristors 14.9 Heterojunction Bipolar Transistors Problems References Bibliography15. Metal-Oxide-Semiconductor Field-Effect Transistors 15.1 Introduction 15.2 An Ideal Metal-Oxide-Semiconductor System 15.3 Oxide Charges and Interface Traps 15.4 MOS Field-Effect Transistors 15.5 SOI MOSFETS 15.6 Charge-Coupled Devices Problems References Bibliography16. High-Speed III-V Semiconductor Devices 16.1 Introduction 16.2 Metal-Semiconductor Field-Effect Transistors 16.3 High Electron Mobility Transistors 16.4 Hot-Electron Transistors 16.5 Resonant Tunneling Devices 16.6 Transferred-Electron Devices Problems References BibliographySolutions to Selected ProblemsAppendixIndex
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书籍介绍
《半导体物理电子学(第2版)》全面介绍了半导体物理的基本内容，这些内容是理解半导体的物理性质和光电器件制备原理的基础。《半导体物理电子学(第2版)》系统性强，合理地安排了物理原理，表征法以及半导体材料和器件的应用等内容，兼顾了物理学家、材料学家和设备工程师的需求。《半导体物理电子学(第2版)》反映了半导体技术在过去十年的进步，包括许多新出现并已进入市场的半导体器件。
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